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Influence of a silicon-bearing film on the early stage oxidation of pure titanium.(Metals)

Chou, Kathleen ; Chu, Peng-Wei ; Levi, Carlos G. ; Marquis, Emmanuelle A.

Journal of Materials Science, 2017, Vol.52(16), p.9884(11) [Tạp chí có phản biện]

ISSN: 0022-2461 ; DOI: 10.1007/s10853-017-1143-1

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  • Nhan đề:
    Influence of a silicon-bearing film on the early stage oxidation of pure titanium.(Metals)
  • Tác giả: Chou, Kathleen ; Chu, Peng-Wei ; Levi, Carlos G. ; Marquis, Emmanuelle A.
  • Chủ đề: Titanium ; Silicon ; Oxidation-Reduction Reactions
  • Là 1 phần của: Journal of Materials Science, 2017, Vol.52(16), p.9884(11)
  • Mô tả: Oxidation of pure titanium with and without silicon-bearing thin films was investigated using transmission electron microscopy, X-ray energy-dispersive spectroscopy, and nanoindentation to understand the initial stages of scale formation mechanisms. For pure titanium, results showed a two-layer oxide scale with dense outer and porous inner layers attributed to the simultaneous outward titanium and inward oxygen diffusion fluxes assessed through the use of a marker layer. Titanium specimens coated with Si before oxidation yielded a thinner oxide with an outer columnar scale and minimal porous inner oxide growth. These findings suggest that Si hinders oxygen transport to the oxide/metal interface, thus reducing overall oxide growth and oxygen ingress into the titanium metal substrate over short-term exposures.
  • Ngôn ngữ: English
  • Số nhận dạng: ISSN: 0022-2461 ; DOI: 10.1007/s10853-017-1143-1

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